Kyoto University builds transistor that survives 600C temperatures, compatible with standard fabs — Standard ion implantation and bottom-gate design fix leakage and voltage drift
محرر واقع مصر
تومز هاردوير
24 أغسطس, 2026
A research team at Kyoto University has built a silicon carbide transistor that operates at 600°C (873 K) using ion implantation.
